Collection of holes in thick TlBr detectors at low temperature

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• 作者：Bur?in D?nmez ; Zhong He ; Hadong Kim ; Leonard J. Cirignano ; Kanai S. Shah
• 关键词：Thallium Bromide ; TlBr ; Semiconductor detector
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2012
• 出版时间：11 October, 2012
• 年：2012
• 卷：689
• 期：Complete
• 页码：7-11
• 全文大小：448 K

文摘

A 3.5¡Á3.5¡Á4.6 mm³ thick TlBr detector with pixellated Au/Cr anodes made by Radiation Monitoring Devices Inc. was studied. The detector has a planar cathode and nine anode pixels surrounded by a guard ring. The pixel pitch is 1.0 mm. Digital pulse waveforms of preamplifier outputs were recorded using a multi-channel GaGe PCI digitizer board. Several experiments were carried out at ?20 ¡ãC, with the detector under bias for over a month. An energy resolution of 1.7 % FWHM at 662 keV was measured without any correction at ?2400 V bias. Holes generated at all depths can be collected by the cathode at ?2400 V bias which made depth correction using the cathode-to-anode ratio technique difficult since both charge carriers contribute to the signal. An energy resolution of 5.1 % FWHM at 662 keV was obtained from the best pixel electrode without depth correction at +1000 V bias. In this positive bias case, the pixel electrode was actually collecting holes. A hole mobility-lifetime of 0.95¡Á10^?4  cm²/V has been estimated from measurement data.