Comparison of FIB-CVD and EB-CVD growth characteristics

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• 作者：Jun-ya Igaki ; Kazuhiro Kanda ; Yuichi Haruyama ; Masahiko Ishida ; Yukinori Ochiai ; Jun-ichi Fujita ; Takashi Kaito and Shinji Matsui
• 关键词：Focused-ion-beam chemical-vapor-deposition ; Electron-beam chemical-vapor-deposition ; Growth characteristics ; Electrical property ; Three-dimensional
• 刊名：Microelectronic Engineering
• 出版年：2006
• 出版时间：April-September 2006
• 年：2006
• 卷：83
• 期：4-9
• 页码：1225-1228
• 全文大小：219 K

文摘

We evaluated the growth characteristics of amorphous carbon (source gas: C₁₄H₁₀) fabricated by focused-ion-beam (FIB) and electron-beam (EB) chemical-vapor-deposition (CVD) in the same apparatus environment. All experiments were carried out in a Ga FIB and SEM composite system. It is confirmed that there are some differences in the surface appearance of pillars fabricated by FIB-CVD and EB-CVD. The rate at which an FIB-CVD pillar grows is about 100 times faster than that of an EB-CVD pillar. We found FIB-CVD wiring has electrical conductor properties with a resistivity of 380 Ω cm, and EB-CVD wiring has electric-insulator properties. Furthermore, we demonstrated by fabricating spring-shape features that FIB-CVD is superior to EB-CVD for making 3D structures.