Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide

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• 作者：Keita Konishi ; Kanji Yoh
• 刊名：Physica E
• 出版年：2010
• 出版时间：September 2010
• 年：2010
• 卷：42
• 期：10
• 页码：2792-2795
• 全文大小：631 K

文摘

We have investigated transport characteristics of epitaxial graphene grown on semi-insulating silicon-face 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N₂ pressure atmosphere. We have succeeded in forming 1–2 layers of graphene on SiC in controlled manner. The surface morphology of formed graphene was analyzed by atomic force microscopy (AFM), low-energy electron diffraction (LEED) and low-energy electron microscope (LEEM). We have confirmed single-layer graphene growth in average by this method. Top-gated, single-layer graphene field-effect transistors (FETs) were fabricated on epitaxial graphene grown on 4H-SiC. Increased on/off ratio of nearly 100 at low temperature and extremely small minimum conductance (0.018–0.3 in 4 e²/h) in gated Hall-bar samples suggest possible band-gap opening of single-layer epitaxial graphene grown on Si-face SiC.