Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots

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• 作者：Saori Kashiwada ; Takashi Matsuda ; Kanji Yoh
• 关键词：A1. Single electron charging ; A1. Qubit ; A3. Self-assembled InAs quantum dot
• 刊名：Journal of Crystal Growth
• 出版年：2007
• 出版时间：April 2007
• 年：2007
• 卷：301-302
• 期：Complete
• 页码：785-788
• 全文大小：370 K

文摘

As a physical realization of a quantum computer, we proposed and investigated a stacked quantum dots system buried in adjacent to the channel of a spin field-effect transistor (FET). In this system, the spin state of the edge quantum dot nearest to the spin-polarized channel of the FET is shown to be measured through spin blockade of the channel conductance [1]. We estimated the exchange interaction energy and resonant frequency of electrons confined in self-assembled InAs quantum dots in this system. We also confirmed the Coulomb blockade of the channel conductance by using the single quantum dot embedded FET structure fabricated as trial structure. Those results indicate that a semiconductor quantum bit structure is feasible using a spin FET structure embedded with self-assembled InAs quantum dot.