Fabrication and characterization of a ¦Ä-dope InAs/InP core shell nanowire transistor

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• 作者：Zhixin Cui ; Tomotsugu Ishikura ; Fauzia Jabeen ; J.-C. Harm ; Kanji Yoh
• 关键词：A1. Low dimensional structures ; A1. Magnetic fields ; B2. Semiconducting III&ndash ; V materials ; B3. Field effect transistors
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：1 September, 2013
• 年：2013
• 卷：378
• 期：Complete
• 页码：511-514
• 全文大小：908 K

文摘

We report the fabrication and the characterization of a transistor based on modulation-dope (¦Ä-dope) InAs/InP core shell nanowire which was grown on InAs (111) substrate by VLS techniques using MBE. The mobility of the core shell nanowire was 13,600 cm²/Vs at room temperature, which is approximately 7-fold increase comparing to the simple InAs nanowire. Estimated mobility at V_ds=0.1 V increased from 13,600 cm²/Vs at RT to 15,600 cm²/Vs at low temperature. A gate voltage dependent crossover from weak-localization to weak-antilocalization was observed. We extracted the spin relaxation length and coherence length using a quasi-one-dimensional model of the conductance. The effectiveness of the InP shell passivation was confirmed.