Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

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• 作者：Patryk Krzysteczko ; Xinli Kou ; Karsten Rott ; Andy Thomas ; Gü ; nter Reiss
• 关键词：Diffusion ; Electromigration ; Tunneling ; Current induced switching ; Memristive behavior
• 刊名：Journal of Magnetism and Magnetic Materials
• 出版年：2009
• 出版时间：February 2009
• 年：2009
• 卷：321
• 期：3
• 页码：144-147
• 全文大小：587 K

文摘

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down to . If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.