Thermodynamic properties of gallium nitride

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• 作者：Timothy J. Peshek^a ; John C. Angus^b ; Kathleen Kash^a ; ^{kxk43@case.edu}
• 关键词：A1. Thermodynamic properties ; B1. Gallium nitride ; A2. Growth from the melt ; B1. Nitrides
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：1 May 2011
• 年：2011
• 卷：322
• 期：1
• 页码：114-116
• 全文大小：123 K

文摘

In this paper we reply to a critique of a recent publication of ours on the thermochemical properties of GaN. In the critique, it was claimed that our results for the Gibbs free energy of formation of GaN were biased to negative values because of the sluggish kinetics of formation and decomposition of GaN at the temperatures of interest. We show that this criticism is not well founded. We further show that the range of reported values of the Gibbs free energy of formation, the enthalpy of formation, and the entropy of formation of GaN permit a relatively wide range of self-consistent choices of these properties. Further refinement of the data is required before any one set of properties can be recommended.