740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

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• 作者：Kazuhiro Ohkawa ; ^{ohkawa@rs.kagu.tus.ac.jp} ; Tomomasa Watanabe ; Masanori Sakamoto ; Akira Hirako ; Momoko Deura
• 关键词：A1. Crystal structure ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials ; B3. Light emitting diodes
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 出版时间：15 March, 2012
• 年：2012
• 卷：343
• 期：1
• 页码：13-16
• 全文大小：491 K

文摘

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.