Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device

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• 作者：Miyamoto ; Yasuyuki ; Kokubo ; Atsushi ; Oguchi ; Hirotsugu ; Kurahashi ; Masaki ; Furuya ; Kazuhito
• 关键词：Ultrafine electrodes ; Double-layer resist ; Ionization of impurity ; Au/Cr/GaInAs ; Electron wave interference device ; 73.23.Ps ; 73.61.Ey ; SE ; CN ; GI
• 刊名：Applied Surface Science
• 出版年：2000
• 出版时间：June, 2000
• 年：2000
• 卷：159-160
• 期：Complete
• 页码：179-185
• 全文大小：2.23 M

文摘

To conduct Young's double slit experiment using a semiconductor, fabrication techniques for 80 to 100-nm-period fine electrodes with 30 to 40-nm thickness are reported. To obtain a resist pattern suitable for the lift-process, we used a double-layer resist with ZEP-520 and PMMA. The mixing of C₆₀ into both layers and rinsing by perfluorohexane (PFH) prevented pattern collapse. As a result, a Au/Cr pattern with a 80-nm period over 30-nm steps was obtained. Using the developed process, we fabricated a device for observing the interference pattern. Unfortunately, the collector current from each electrode was not uniform. Moreover, the current showed anomalous behavior. The current occasionally converged in two different points and sudden jumps from the lower converged point to the upper converged point were also observed in time-dependent measurements. Such anomalous behavior might be explained in terms of a change in the ionization of an impurity near the metal–semiconductor interface.