Bulk compound synthesis and oxygen deficiency effect on electronic and magnetic properties of the Zn-based oxyarsenide LaZnAsO_1?¦Ä

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• 作者：Xia Wang ; Yanfeng Guo ; Baoe Li ; Yoshihiro Tsujimoto ; Kazunari Yamaura
• 关键词：Layered oxyarsenide LaZnAsO ; High-pressure synthesis ; Carrier doping
• 刊名：Journal of Alloys and Compounds
• 出版年：2014
• 出版时间：5 January, 2014
• 年：2014
• 卷：582
• 期：Complete
• 页码：241-245
• 全文大小：1059 K

文摘

LaZnAsO has been studied mainly in the thin film form that was indicated as a wide-gap insulator with the gap size of ¡«2.3 eV. We herein report the synthesis of polycrystalline bulk LaZnAsO compound for the first time under a high pressure of 6 GPa. Effect of oxygen deficiency on the electric and magnetic properties of the compound was also investigated by synchrotron X-ray diffraction and measurements of electrical resistivity, magnetic susceptibility, isothermal magnetization, and specific heat. The bulk LaZnAsO crystallized into the ZrCuSiAs-type structure with the space group P4/nmm, isostructural with the layered LaFeAsO. It is semiconducting with a thermal activation energy of ¡«0.8 eV, and the semiconductivity was highly robust against oxygen deficiency up to 25 at. % . The virtue will benefit the development of a diluted magnetic semiconductor.