Comparison of chalcopyrite and kesterite thin-film solar cells

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• 作者：Kee-Jeong Yang^a ; Jun-Hyoung Sim^a ; Dae-Ho Son^a ; Dong-Hwan Jeon^a ; Dae-Kue Hwang^a ; Dahyun Nam^b ; Hyeonsik Cheong^b ; SeongYeon Kim^c ; JunHo Kim^c ; Dae-Hwan Kim^a ; ^{monolith@dgist.ac.kr} ; Jin-Kyu Kang^a ; ^{apollon@dgist.ac.kr}
• 关键词：Solar cell ; CIGSe ; CZTS ; Defect ; Secondary phase
• 刊名：Journal of Industrial and Engineering Chemistry
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：45
• 期：Complete
• 页码：78-84
• 全文大小：2701 K
• 卷排序：45

文摘

In this study, we investigate methods of improving the efficiency of Cu2ZnSn(S,Se)4 (CZTS)-based solar cells by comparing Cu(In,Ga)Se2 (CIGSe)- and CZTS-based absorber layers. In particular, the CZTS-based absorber exhibits lower current characteristics than the CIGSe absorber layer in terms of the band gap alignment and electron-hole recombination at the CdS-absorber interface. Moreover, we demonstrate that defects are one of the causes of the voltage loss. In order to improve the efficiency of CZTS-based solar cells, it is important to control the band gap alignment at the CdS-absorber layer interface and to suppress the formation of secondary phases inside the absorber.