Zinc addition changes the semiconductor properties of oxide films of Alloy600 in high temperature water

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• 作者：Shenghan Zhang ; Yu Tan ; ^{lucifertan@163.com} ; Kexin Liang
• 关键词：Zinc addition ; Semiconductors property ; High temperature water ; Alloy600 ; Photoelectrochemical response ; Mott&minus ; Schottky response
• 刊名：Materials Letters
• 出版年：2012
• 出版时间：1 February 2012
• 年：2012
• 卷：68
• 期：Complete
• 页码：36-39
• 全文大小：580 K

文摘

Photoelectrochemical responses and Mott-Schottky responses were employed to investigate the oxide films on Alloy600 corroded in high temperature water with zinc addition. The photocurrent spectra can derive different oxides as Fe₂O₃ with bandgap energy E_g = 2.2 eV, Cr₂O₃(E_g = 3.5 eV), and Fe_xNi_1 ?#xA0;xCr₂O₄(E_g = 4.1 eV) of the oxide films on Alloy600 corroded in high temperature water besides ZnO(E_g = 3.2 eV) for zinc addition. The photocurrent responses in function of the applied potential indicate an untypical p-type semiconductor of the oxide film on Alloy600 with zinc addition. The Mott?Schottky responses indicate a negative movement of flat band potential of oxide films on Alloy600 with zinc addition. Zn is identified in the surface of the oxide film on Alloy 600 by XPS.