Electric field-induced characteristics of NaSbSe2 thin films obtained by laser technology
详细信息 查看全文
- 作者：Khlyap ; G. ; Bilozertseva ; V. ; Ovcharenko ; S. ; Diakonenko ; N.
- 关键词：Thin film ; NaSbSe2 ; Laser deposition ; Electric properties
- 刊名：Thin Solid Films
- 出版年：2004
- 出版时间：April 1, 2004
- 年：2004
- 卷：453-454
- 期：Complete
- 页码：154-156
- 全文大小：374 K
文摘
Multi-component compounds are of special interest for numerous applications in photonics and microelectronics due to flexibility of their electric and structural properties. Sb-contained semiconductor materials are attractive for performing various field-effect sensors operating under different environmental conditions. Room-temperature electric field-induced characteristics of metal-semiconductor structures based on thin (up to 1 μm) amorphous films NaSbSe2 grown by laser recrystallization on the glass substrates were investigated under normal atmospheric conditions. Transmission electron microscopy and X-ray diffraction methods applied for studying the films’ surface were shown island-like relief. The current–field functions were registered as power-like dependencies Iexper
(Fa)mexp(−Esa/kBT), where Fa stands for applied electric field, Esa is energy of surface charge centers activation and m1. These data point out the noticeable influence of the film surface on electric properties of the structure as a whole. Numerical analysis of the experimental data has demonstrated a complete mechanism of carriers’ transfer as superposition of quasi-space charge limited current and tunneling conductivity. Results obtained under the study are seen to be useful for further development of the growth technology and device fabrication.
(Fa)mexp(−Esa/kBT), where Fa stands for applied electric field, Esa is energy of surface charge centers activation and m1. These data point out the noticeable influence of the film surface on electric properties of the structure as a whole. Numerical analysis of the experimental data has demonstrated a complete mechanism of carriers’ transfer as superposition of quasi-space charge limited current and tunneling conductivity. Results obtained under the study are seen to be useful for further development of the growth technology and device fabrication.