Investigation of ZnCdHgTe thin films and ZnCdHgTe-based heterostructures

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• 作者：Khlyap ; G. ; Sydorchuk ; P. ; Polit ; J. ; Oszwaldowsky ; M.
• 刊名：Journal of Crystal Growth
• 出版年：2005
• 出版时间：February 15, 2005
• 年：2005
• 卷：275
• 期：1-2
• 页码：e927-e930
• 全文大小：191 K

文摘

Quaternary solid solutions Zn_xCd_yHg_1−x−yTe (0<x<0.20, 0<y<0.30) were obtained by liquid-phase epitaxy technique from Te-rich solutions on CdTe and ZnCdTe substrates and by pulse laser deposition on amorphous (glass and glass-ceramics) substrates. The layers were of p-type conductivity (p10¹⁷ cm⁻³). Electric characteristics of the as-grown samples were examined under T=77–290 K in the wide range of applied bias. All samples have demonstrated diode-like characteristics (both current–voltage and capacitance–voltage dependencies under test signal frequency f=1 kHz). Heterostructures CdTe/ZnCdHgTe exhibited photosensitivity under room temperature in spectral range 0.5–0.65 μm. The first results of numerical analysis performed according to the experimental data pointed out the complete mechanism of the carriers transport.