Results of structural and electrical characteristics investigations performed for new heterostructures based on narrow-gap semiconductor ZnCdHgTe have been reported. The epilayers p-ZnxCdyHg1−x−yTe/p-Hg0.8Cd0.2Te and p-ZnxCdyHg1−x−yTe/p-Zn0.04Cd0.96Te (x