Some properties of heterostructures based on new semiconductor ZnCdHgTe

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• 作者：Andrukhiv ; A. ; Khlyap ; G. ; Andrukhiv ; M.
• 关键词：Epitaxial layer ; Heterojunction ; Current-voltage characteristic
• 刊名：Journal of Crystal Growth
• 出版年：1999
• 出版时间：March, 1999
• 年：1999
• 卷：198-199
• 期：2
• 页码：1162-1164
• 全文大小：166 K

文摘

Results of structural and electrical characteristics investigations performed for new heterostructures based on narrow-gap semiconductor ZnCdHgTe have been reported. The epilayers p-Zn_xCd_yHg_1−x−yTe/p-Hg_0.8Cd_0.2Te and p-Zn_xCd_yHg_1−x−yTe/p-Zn_0.04Cd_0.96Te (x = 0.10-0.13, y = 0.00-0.08) obtained by modified LPE technique of ZnCdHgTe films on substrates of (111) orientation. The detailed Hall measurements showed the formation of inverse conductivity type “channel-island” structure in subsurface region of as-grown epilayer. The study of I-V characteristics in the temperature range 177-290 K at applied voltage V_a = 0-4 V shows that the carrier transport processes are caused by the recombination of majority carriers tunneling from the bulk of Hg_0.8Cd_0.2Te substrate material with localized states in ZnCdHgTe and by the interaction of free carriers and “potential relief” appeared as a consequence of the conductivity inversion mentioned above.