Quasi-two-dimensional electron layer in ZnCdHgTe and PbS heterostructures

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• 作者：Andrukhiv ; A. ; Khlyap ; G. ; Andrukhiv ; M. ; Bochkariova ; L.
• 关键词：Heterostructures ; Schottky barrier ; Semiconductors ; Surface and interface states
• 刊名：Thin Solid Films
• 出版年：1995
• 出版时间：October 15, 1995
• 年：1995
• 卷：267
• 期：1-2
• 页码：126-128
• 全文大小：215 K

文摘

Electron system properties in heterostructures based on ZnCdHgTe and PbS semiconductors were investigated for the first time. These structures were obtained by liquid phase epitaxy and molecular beam epitaxy. Quasi-two-dimensional electron gas was formed: between metal (lead) and p-type ZnCdHgTe semiconductor in the first case, and in the p-PbS/n-ZnSe heterostructure in the second case. Current-voltage characteristics in the temperature range of 77-293 K were investigated. The main electrical parameters (surface electron state density, space charge region capacitance etc.) in the Anderson-Cherveny-Liou model were estimated. The electron wave functions in the electron gas system and the relevant energy eigenvalues were calculated in the approximation of a triangle potential well.