Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs
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- 作者：Harshit Agarwala ; agarwalh@iitk.ac.in" class="auth_mail" title="E-mail the corresponding author ; Pragya Kushwahaa ; Chetan Guptaa ; Sourabh Khandelwalb ; Chenming Hub ; Yogesh Singh Chauhana ; 1 ; chauhan@iitk.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Impedance field ; Lateral asymmetry ; Non uniform doping ; Flicker noise
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：115
- 期：part_PA
- 页码：33-38
- 全文大小：1183 K
文摘
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Flicker noise behavior in presence of lateral asymmetry is studied.
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Noise model based on Klaassen Prins method underestimates 1/f noise in such devices.
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New model is developed and the physics behind noise underestimation is discussed.
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This study also explain 1/f noise degradation observed in real devices.