Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages

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• 作者：Xiang-Yu Guan^a ; Hee Kwan Lee^b ; Soo Hyun Lee^a ; Jae Su Yu^a ; ^{jsyu@khu.ac.kr}
• 关键词：Light-emitting diodes ; Packages ; Junction temperature ; Thermal transient tester ; Finite element method
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：127
• 期：Complete
• 页码：51-56
• 全文大小：2232 K
• 卷排序：127

文摘

The experimental and theoretical analysis of VLEDs with two different types of packages was reported. The thermal properties of packaged devices were measured by a thermal transient tester. The device performance was closely related to the heat dissipation determined by package designs and material selections. The MLF packaged device indicated lower Rth value in comparison with the MPLF packaged device.