Ultrafast one-step combustion synthesis and thermoelectric properties of In-doped Cu2SnSe3
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- 作者：Yuyang Lia ; c ; Guanghua Liua ; liugh02@163.com" class="auth_mail" title="E-mail the corresponding author ; Jiangtao Lia ; lijiangtao@mail.ipc.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Kexin Chenb ; Gang Hea ; Zengchao Yanga ; Yemao Hana ; Min Zhoua ; Laifeng Lia
- 关键词：Semiconductor ; Chalcogenides ; Thermoelectric effects ; Electrical conductivity ; Thermal conductivity
- 刊名：Materials Chemistry & Physics
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：177
- 期：Complete
- 页码：398-404
- 全文大小：2311 K
文摘
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Dense bulk Cu2SnSe3 materials are prepared by one-step combustion synthesis.
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The solubility limit of Indium into the Cu2SnSe3 matrix has been discussed.
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A maximum ZT of 0.65 is obtained for the Cu2Sn1−xInxSe3 (x = 0.2) at 773 K.