Specific features of photoconductivity and photoinduced piezoelectricity in AgGaGe₃Se₈ doped crystals

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• 作者：I.V. Kityk^a ; ^{iwank74@gmail.com} ; G.L. Myronchuk^b ; O.V. Parasyuk^c ; A.S. Krymus^b ; ^h ; P. Rakus^a ; A.M. El-Naggar^d ; ^e ; A.A. Albassam^e ; G. Lakshminarayana^f ; A.O. Fedorchuk^g
• 关键词：Photoinduced piezoelectricity ; Chalcogenide optical crystals ; Optical transport in chalcogenides
• 刊名：Optical Materials
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：63
• 期：Complete
• 页码：197-206
• 全文大小：3463 K
• 卷排序：63

文摘

Photoconductivity and laser piezoelectricity in AgGaGe3Se8:In,Sn, Cu is explored. Strong electron-phonon anharmonicity is crucial. Increasing temperature favor decay of photoconductivity. Two principal kind of defective centers are principal.