Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

详细信息    查看全文

• 作者：Lalinsk&yacute ; T. ; &Scaron ; kriniarová ; J. ; Kuzmí ; k ; J. ; Hasenö ; hrl ; S. ; et. al.
• 关键词：HEMT ; InGaP ; InGaP heterostructure ; InGaAs channel ; DC performance
• 刊名：Vacuum
• 出版年：2001
• 出版时间：May 14, 2001
• 年：2001
• 卷：61
• 期：2-4
• 页码：323-327
• 全文大小：112 K

文摘

The technology and performance of 150nm gate length InGaP/InGaAs/GaAs pseudomorphic HEMTs based on a very narrow InGaAs channel are presented. DC characterization in the temperature range between 300 and 77K is performed to explain some anomalous effects in the device low-temperature performance. In addition to DC characterization, high-speed operation of this device is investigated. Current gain cut-off frequency (f_t), and maximum oscillation frequency (f_max) were found to be 53 and 150GHz, respectively.