Patterning of a micromechanical coplanar waveguide using a dry etching technique

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• 作者：Haí ; k ; &Scaron ; . ; Mozolová ; Z. ; Lalinsk&yacute ; T. ; Tomá ; &scaron ; ka ; M. ; et. al.
• 关键词：RIE ; GaAs ; InGaP ; Coplanar waveguide
• 刊名：Vacuum
• 出版年：2002
• 出版时间：December 24, 2002
• 年：2002
• 卷：69
• 期：1-3
• 页码：283-287
• 全文大小：399 K

文摘

GaAs micromachining technology was used for fabricating coplanar transmission lines on membrane-like AlGaAs/GaAs and InGaP/GaAs bridges. A front-side surface micromachining is combined with a back-side bulk GaAs micromachining. A double-side aligned selective reactive ion etching of GaAs and GaAs heterostructures through the openings in masks, using AlGaAs or InGaP as an etch-stop layers is then used for three-dimensional patterning of the bridge based micromechanical coplanar wavequide (MCPW). MCPW test structures of various lengths (150–900μm) were defined by Ti/Au metallization. A lift-off technique was used to pattern the transmission lines in accordance with the MCPW simulation.