Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

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• 作者：O. Babchenko^a ; ^{oleg.babchenko@savba.sk} ; J. Dzuba^a ; T. Lalinsk&yacute ; ^a ; M. Vojs^b ; A. Vincze^c ; T. Ižá ; k^d ; G. Vanko^a
• 关键词：AlGaN/GaN heterostructure ; Hydrogen plasma ; SIMS ; TLM ; HEMT
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：92-97
• 全文大小：1449 K
• 卷排序：395

文摘

AlGaN/GaNheterostructures with electric contacts were treated by hydrogen plasma. No surface degradation after treatment was detected by SEM. Hydrogen plasma caused increasing of sheet resistance up to 3.5 times after 60 min. Incorporation of hydrogen in AlGaN sub-surface region was observed by SIMS. Electrical measurements indicate hydrogen induced Schottky barrier lowering.