Multi layer structure for encapsulation of organic transistors

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• 作者：Luca Fumagalli ; Maddalena Binda ; Inma Suarez Lopez ; Dario Natali ; Marco Sampietro ; S ; ro Ferrari ; Luca Lamagna ; Marco Fanciulli
• 关键词：Organic transistors ; Encapsulation ; Aluminum oxide ; Atomic layer deposition
• 刊名：Organic Electronics
• 出版年：2009
• 出版时间：July 2009
• 年：2009
• 卷：10
• 期：4
• 页码：692-695
• 全文大小：352 K

文摘

A novel encapsulation structure to protect organic thin film transistors against oxygen and moisture contaminations is presented. The sealing architecture is comprised of three-layers: aluminum oxide deposited by means of Atomic Layer Deposition is the actual capping layer, while cross-linked poly-vinylphenol and poly-vinylphenol prevent the contamination/damage of the underlying organic semiconductor during the oxide growth. The process has negligible impact on device mobility but it enables poly-3-hexylthiophene based transistors to operate with an on/off ratio in excess of 10³ even after 100 days of continuous ambient air exposure.