Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)

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• 作者：G. Congedo ; S. Spiga ; L. Lamagna ; A. Lamperti ; Yu. Lebedinskii ; Yu. Matveyev ; A. Zenkevich ; P. Chernykh ; M. Fanciulli
• 关键词：Lanthanum aluminate ; Atomic layer deposition ; High-κ ; dielectrics
• 刊名：Microelectronic Engineering
• 出版年：2009
• 出版时间：July-September 2009
• 年：2009
• 卷：86
• 期：7-9
• 页码：1696-1699
• 全文大小：371 K

文摘

Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La(ⁱPrCp)₃, Al(CH₃)₃ and O₃ species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N₂ atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant (κ) of 18 ± 1.