Rare earth-based high-k materials for non-volatile memory applications

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• 作者：M. Aless ; ri ; A. Del Vitto ; R. Piagge ; A. Sebastiani ; C. Scozzari ; C. Wiemer ; L. Lamagna ; M. Perego ; G. Ghidini ; M. Fanciulli
• 关键词：Non-volatile memory ; Atomic layer deposition ; High-k dielectric ; Rare earth oxide
• 刊名：Microelectronic Engineering
• 出版年：2010
• 出版时间：March 2010
• 年：2010
• 卷：87
• 期：3
• 页码：290-293
• 全文大小：489 K

文摘

A study of a La-based high-k oxide to be employed as active dielectric in future scaled memory devices is presented. The focus will be held on La_xZr_1−xO_2−δ (x = 0.25) compound. In order to allow the integration of this material, its chemical interaction with an Al₂O₃ cap layer has been studied. Moreover, the electrical characteristics of these materials have been evaluated integrating them in capacitor structures. The rare earth-based ternary oxide is demonstrated to be a promising candidate for future non-volatile memory devices based on charge trapping structure.