Preparation of LaNiO₃/SrTiO₃/LaNiO₃ capacitor structure through sol-gel process

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• 作者：Jiqiang Jia^a ; Gaoyang Zhao^a ; ^b ; ^{zhaogy@xaut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Li Lei^b ; Xin Wang^a
• 关键词：LaNiO3/SrTiO3/LaNiO3 ; Relative dielectric constant ; Tunability ; Dielectric dissipation factor
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：42
• 期：8
• 页码：9762-9768
• 全文大小：2345 K

文摘

In this paper, SrTiO₃/LaNiO₃ (STO/LNO) bilayer films were prepared on lanthanum aluminate (LAO) substrates by use of the sol–gel technique. An array of LNO electrodes with diameters of 200 μm was prepared on the surface of STO/LNO bilayer films. Therefore, LaNiO₃/SrTiO₃/LaNiO₃ (LNO/STO/LNO), a capacitor structure with symmetrical top and bottom electrodes, was obtained. The XRD analysis showed that the obtained capacitor structure has a biaxial texture. The dielectric test suggested that the relative dielectric constant of the LNO/STO/LNO structure is symmetric, has a high tunability, and has a low dielectric dissipation factor (tan δ) in response to varying electric field bias. As the temperature decreased, the relative dielectric constant of the STO film increased, the tunability increased, and the tan δ decreased. At test conditions of 80 K and 100 kH, the tunability and the figure of merit (FOM) reached 56% and 107, respectively.