Piezoelectric field effect on the optical properties of In0.21Ga0.79As/GaAs (113) MQW
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- 作者：Ibtissem Fraj ; frajibtissem@yahoo.fr" class="auth_mail" title="E-mail the corresponding author ; Faouzi Saidi ; faouzi.saidi@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Lotfi Bouzaiene ; Larbi Sfaxi ; Hassen Maaref
- 关键词：Multiple quantum wells ; Photoluminescence spectroscopy ; High index substrate ; S shape form
- 刊名：Optical Materials
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：58
- 期：Complete
- 页码：121-127
- 全文大小：1652 K
文摘
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A numerical approach by the resolution of Schrödinger equation has been reported.
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The Pässler model is the most accurate fit of excitonic transitions.
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S-shape form in Middle QW (113) is due to carrier localization and polarity.
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The Classical models fail to follow the S-shape temperature dependence.