Highly efficient MoS2 counter electrodes are prepared at a low temperature.
A near-IR pulsed laser is proposed for post-sintering of MoS2 films.
Laser-sintered MoS2 counter electrodes exhibit a comparable performance with Pt.
网站地图 | 常见问题 | 交通位置 | 联系我们 | OA远程办公 | English
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号
地址:北京市海淀区学院路29号 邮编:100083
电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700