Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
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- 作者：A.D. Utrillaa ; D.F. Reyesb ; J.M. Llorensc ; I. Artachod ; T. Benb ; D. Gonzá ; lezb ; Ž. Gačevića ; A. Kurtza ; A. Guzmana ; A. Hierroa ; J.M. Ulloaa ; jmulloa@isom.upm.es" class="auth_mail" title="E-mail the corresponding author
- 关键词：Solar cells ; Quantum dots ; GaAsSb ; Capping layers ; Type-II ; Carrier collection efficiency
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：282-289
- 全文大小：1956 K
文摘
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GaAsSb capping layers significantly enhance InAs quantum dot solar cells efficiency
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Photoresponse beyond 1.5 µm is obtained from InAs quantum dot solar cells
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The negative impact of the wetting layer is palliated by the GaAsSb capping layer
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High Sb content type-II structures lead to a faster Voc recovery under concentration