Series resistance contribution of majority carriers in CELLO impedance analysis: Influence of wafer thickness variation
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文摘

CELLO obtains spatially resolved time constants describing photocurrent extraction.

Local ohmic losses can be analyzed by light with varying penetration depth.

For PERC cells, majorities-related time constants are large, possibly dominant.

Majorities’ ohmic losses at point contacts are obtained by local laser illumination.

Losses depending on wafer thickness and laser penetration depth yield thickness map.

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