VDAC3 gating is activated by suppression of disulfide-bond formation between the N-terminal region and the bottom of the pore
详细信息 查看全文
- 作者：Masateru Okazakia ; b ; Katsue Kurabayashia ; b ; Miwako Asanumaa ; b ; Yohei Saitoa ; b ; Kosuke Dodoa ; b ; Mikiko Sodeokaa ; b ; sodeoka@riken.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：VDAC ; voltage-dependent anion channel ; LDAO ; n-dodecyl-N ; N-dimethylamine-N-oxide ; CV ; column volume ; DTT ; dithiothreitol ; IAA ; iodoacetamide ; GSNO ; S-nitrosoglutathione ; ROS ; reactive oxygen species ; MMP ; mitochondrial membrane potential ; SDS-PAGE ; sodium dodecyl sulfate-polyacrylamide gel electrophoresis ; TCA ; trichloroacetic acid ; NO ; nitric oxide
- 刊名：Biochimica et Biophysica Acta (BBA)-Biomembranes
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：1848
- 期：12
- 页码：3188-3196
- 全文大小：1516 K
文摘
- •
Channel gating of VDAC3 was activated by suppression of disulfide-bond formation.
- •
Disulfide-bond is formed between the N-terminal region and bottom of the pore.
- •
VDAC3 might serve as a physiological redox sensor.