Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range
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- 作者：G. Regula<sup>asup> ; E.B. Yakimov<sup>bsup><sup> ; sup><sup>csup><sup> ; sup><sup>yakimov@iptm.rusup>
- 关键词：4H-SiC ; Stacking fault ; Partial dislocation ; CL ; REDG ; LEEBI
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：99
- 期：Complete
- 页码：226-230
- 全文大小：2929 K
- 卷排序：99
文摘
The effect of low energy electron beam irradiation (LEEBI) on Shockley-type stacking faults in 4H-SiC has been studied. New stacking faults are created and expanded under LEEBI while those introduced by plastic deformation do not change. Stacking faults introduced in 4H-Si under deformation and by LEEBI are dragged by partial dislocations of different types.