WS2 nanotube formation by sulphurization: Effect of precursor tungsten film thickness and stress
详细信息 查看全文
- 作者：Sheung Mei Nga ; Hon Fai Wonga ; Wang Cheung Wonga ; Choon Kiat Tana ; Sin Yuk Choia ; Chee Leung Maka ; Gui Jun Lia ; Qing Chen Dongb ; ; Chi Wah Leunga ; dennis.leung@polyu.edu.hk" class="auth_mail" title="E-mail the corresponding author
- 关键词：Transition metal dichalcogenides ; Tungsten disulphide ; Nanotubes ; Patterning
- 刊名：Materials Chemistry & Physics
- 出版年：2016
- 出版时间：15 September 2016
- 年：2016
- 卷：181
- 期：Complete
- 页码：352-358
- 全文大小：2651 K
文摘
- •
WS2 were obtained by sulphurization of sputtered tungsten films on Si substrates.
- •
Resultant WS2 nanostructure morphology was dependent on precursor film thickness.
- •
Patterning into micro-size W tracks suppressed the formation of nanotubes.
- •
Stress relaxation was attributed as controlling factor for WS2 structure formation.