Microstructure properties of nanocrystalline silicon/SiO₂ multilayers fabricated by laser-induced crystallization

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• 作者：Hecheng Zou ; Liangcai Wu ; Xinfan Huang ; Feng Qiao ; Peigao Han ; Xiaohui Zhou ; Zhongyuan Ma ; Yansong Liu ; Wei Li and Kunji Chen
• 关键词：Nanocrystalline Si ; Pulsed laser ; Multilayers ; Constrained crystallization
• 刊名：Thin Solid Films
• 出版年：2005
• 出版时间：2005
• 年：2005
• 卷：491
• 期：1-2
• 页码：212-216
• 全文大小：220 K

文摘

Using laser-induced crystallization, we successfully fabricated nanocrystalline silicon (nc-Si) /SiO₂ multilayers from hydrogenated amorphous silicon (a-Si:H) /SiO₂ multilayers, which were prepared by alternate deposition of a-Si:H layer and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition system. The microstructure of the multilayers was characterized by the following techniques: cross-section transmission electron microscopy, low-angle X-ray diffraction, Raman scattering, electron diffraction and atomic force microscopy. The results show that nc-Si crystals with high density have formed within as-deposited a-Si:H layers and that their size can be precisely controlled by adjusting the thickness of a-Si:H layers based on the constrained crystallization principle.