Charging and Coulomb blockade effects of the nc-Si embedded in SiN_x double-barrier structures

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• 作者：Xinfan Huang ; Liangcai Wu ; Min Dai ; Peigao Han ; Linwei Yu ; Zhongyuan Ma ; Yansong Liu ; Wei Li and Kunji Chen
• 关键词：Nanocrystals ; Electrical and electronic properties ; Band structure ; Chemical vapor deposition ; Quantum wells ; wires and dots
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2006
• 出版时间：15 June 2006
• 年：2006
• 卷：352
• 期：9-20
• 页码：1126-1129
• 全文大小：250 K

文摘

We fabricated a series of a-SiN_x/nc-Si/a-SiN_x double-barrier structures by plasma-enhanced chemical vapor deposition and subsequent thermal annealing technique. The photographs of transmission electron microscopy show that the nc-Si layer has been formed. The estimated density of nc-Si dots is of the order of 10¹¹–10¹² cm⁻². In the C–V measurements, for the samples with thicker SiN_x layer (30 nm), we observed C–V hysteresis characteristics, which can be explained by charging effect in nc-Si through the F–N tunneling mechanism; while for the sample with thinner SiN_x layer (5 nm), the C–V curves show the peak structures which can be attributed to the resonant tunneling of electrons into nc-Si controlled by Coulomb blockade effect. From the interval bias voltage between the two peaks, the Coulomb charging energy of nc-Si dot was estimated.