Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure

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• 作者：Liangcai Wu ; Min Dai ; Xinfan Huang ; Yongjun Zhang ; Wei Li ; Jun Xu ; Kunji Chen
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2004
• 出版时间：15 June 2004
• 年：2004
• 卷：338-340
• 期：Complete
• 页码：318-321
• 全文大小：358 K

文摘

By using capacitance–voltage and conductance–voltage measurements, we studied electron tunneling and storage in a nanocrystalline silicon (nc-Si) floating gate double-barrier structure (SiO₂/nc-Si/SiO₂), which is fabricated in situ by plasma oxidation and layer-by-layer deposition technique in a plasma enhanced chemical vapor deposition (PECVD) system. Frequency-dependent capacitance peaks due to electron resonant tunneling into quantum confinement energy levels of nc-Si dots and Coulomb blockade charging in nc-Si dots have been observed for the first time at room temperature in SiO₂/nc-Si/SiO₂ system by capacitance spectroscopy. Meanwhile, conductance plateau in the region of capacitance peaks are also observed due to charging effect in nc-Si dots. Experimental results are in agreement with theoretical evaluation based on the model of Coulomb blockade.