The role of SiO₂ buffer layer in the growth of highly textured LiNbO₃ thin film upon SiO₂/Si by pulsed laser deposition

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• 作者：Wang ; Xinchang ; Ye ; Zhizhen ; He ; Junhui ; Cao ; Liangliang ; Zhao ; Binghui
• 关键词：Thin film ; LiNbO₃ ; Pulsed laser deposition ; Silicon substrate
• 刊名：Materials Letters
• 出版年：2004
• 出版时间：November, 2004
• 年：2004
• 卷：58
• 期：27-28
• 页码：3597-3600
• 全文大小：205 K

文摘

Highly c-axis-oriented lithium niobate (LiNbO₃) thin films have been grown on Si with optimum thickness of the SiO₂ buffer layer by pulsed laser deposition technique. The amorphous SiO₂ buffer layer was formed on Si (100) wafer by thermal oxidation method. The crystallinity and c-axis orientation of LiNbO₃ films were strongly influenced by the thickness of amorphous SiO₂ buffer layers. The optimum thickness of the amorphous SiO₂ buffer layer was found to be about 230 nm for the growth of highly c-axis-oriented LiNbO₃ films. The achieved films have smooth surface and sharp interface. The prism coupler method indicates that the prepared LiNbO₃ films have great potential for optical waveguide device.