Fabrication of flexible Al-doped ZnO films via sol-gel method
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文摘

Flexible Al-doped ZnO films were fabricated by conventional sol–gel method.

All the films showed preferential c-axis orientation on flexible PI substrates.

Transmittances reached 70% above a cut-off wavelength of ∼500 nm.

Electrical conductivity could be enhanced by further vacuum post-annealing.

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