Experimental study of LiNbO<sub>3sub> memristors for use in neuromorphic computing
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- 作者：Shu Wang<sup>1sup> ; Weisong Wang<sup> ; sup><sup>1sup><sup> ; sup><sup>wwang4@udayton.edusup> ; Chris Yakopcic<sup> ; sup><sup>1sup><sup> ; sup><sup>cyakopcic1@udayton.edusup> ; Eunsung Shin ; Guru Subramanyam ; Tarek M. Taha
- 关键词：Lithium Niobate ; Memristor ; Neuromorphic computing
- 刊名：Microelectronic Engineering
- 出版年：2017
- 出版时间：25 January 2017
- 年：2017
- 卷：168
- 期：Complete
- 页码：37-40
- 全文大小：632 K
- 卷排序：168
文摘
Lithium Niobate memristor devices with repeatable resistance switching Devices with several tunable resistance states induced by pulse-train switching Devices with strong data retention after the resistance tuning procedure