Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistors
详细信息 查看全文
- 作者：Min Liu liumin1086@163.com" class="auth_mail ; Yuming Zhang ; Hongliang Lu ; hllv@xidian.edu.cn" class="auth_mail ; Yimen Zhang ; Jincan Zhang ; Zhichao Wei ; Chenghuan Li
- 关键词：HBT ; Heterojunction ; Proton irradiation ; Irradiation effect ; Cutoff frequency
- 刊名：Solid-State Electronics
- 出版年：June 2014
- 年：2014
- 卷：96
- 期：Complete
- 页码：9-13
- 全文大小：611 K
文摘
- •
The irradiation effects on InGaP/GaAs SHBTs are focused on low-energy proton.
- •
To analyze the irradiation-induced damage, the ideality factor of IBE is extracted.
- •
The degradation of fT after irradiation at a fixed bias is presented theoretically.
- •
The open-collector technique is used to extract the access resistances.
- •
The lower the proton energy, the greater the influence on the devices.