TiO2−x films prepared by ion beam assisted deposition
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- 作者：Li ; Changrong ; Zheng ; Zhihong ; Zhang ; Fuming ; Yang ; Shiqi ; Wang ; Huiming ; Chen ; Lizhi ; Zhang ; Feng ; et. al.
- 关键词：Titanium dioxide ; IBAD ; Annealing ; XRD ; Raman ; XPS ; RBS
- 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- 出版年：2000
- 出版时间：June 2, 2000
- 年：2000
- 卷：169
- 期：1-4
- 页码：21-25
- 全文大小：165 K
文摘
TiO2−x films were prepared by ion beam assisted deposition on an EATON Z-200 system, during which concurrent electron beam evaporation of titanium and bombardment with an inert gas ion beam were carried out in an O2 atmosphere. Xe+ and Ne+ ions with different current density and incident angles were used. The films were investigated using X-ray diffraction (XRD), glancing incident X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). RBS analysis shows that the films are nearly stoichiometric. XPS measurements reveal that the surface was fully oxidized, but Ti2+, Ti3+ and Ti4+ coexist on the Ar+-sputtered surface. XRD and GIXRD analyses show that almost all the films have rutile-type structure and (2 0 0) preferred orientation. After annealing the 2θ angle shift to higher degrees and the (2 0 0) peak intensity increases, which means better crystallization and orientation.