Preparation of SnTe thin films on Au(1 1 1) by electrodeposition route

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• 作者：İ ; lkay Ş ; iş ; man ; ^a ; ^{isisman@sakarya.edu.tr"" rel=""nofollow} ; Hasan &#xd6 ; z^a
• 关键词：SnTe ; Thin films ; Electrodeposition ; Band gap
• 刊名：Electrochimica Acta
• 出版年：2011
• 出版时间：1 May 2011
• 年：2011
• 卷：56
• 期：13
• 页码：4889-4894
• 全文大小：1109 K

文摘

Tin telluride (SnTe) thin films were deposited onto Au(1 1 1) substrates from an aqueous solution containing SnCl₂, TeO₂, and C₆H₅Na₃ at room temperature (25 °C) for the first time via electrodeposition route. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the stoichiometric SnTe thin films could be obtained at −0.50 V. The as-deposited thin films were crystallized in the preferential orientation along the (2 2 0) plane. SEM investigations indicated that the shape of thin films could be altered from a spherical particle to a dendritic crystal by increasing the deposition potential. The growth of the dendritic films proceeds via formation of nanoparticles and growth of dendritic crystals on these nanoparticles. The optical absorption studies as a function of deposition time indicated that the band gap of the SnTe thin film increases as the deposition time decreases.