Investigation of dimensional and heat source effects in Lock-In Thermography applications in semiconductor packages

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• 作者：Kasemsak Kijkanjanapaiboon^a ; Mayue Xie^b ; ^{mayue.xie@intel.com} ; Jiang Zhou^a ; Xuejun Fan^a ; ^{xuejun.fan@lamar.edu}
• 关键词：Lock-in Thermography ; Fault-isolation ; Semiconductor device ; Finite element analysis ; Shape of heat source
• 刊名：Applied Thermal Engineering
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：113
• 期：Complete
• 页码：673-683
• 全文大小：3060 K
• 卷排序：113

文摘

The use of semi-infinite models in Lock-In Thermography applications examined. The errors in phase shift estimate found at lower frequency with high diffusivity and thinner specimen. The phase shift may decrease with the lock-in frequency as opposed to the semi-infinite models.