Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfO_xN_y gate dielectric

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• 作者：Xiao Zou ; Guojia Fang ; Longyan Yuan ; Xingsheng Tong ; Xingzhong Zhao
• 刊名：Microelectronics Reliability
• 出版年：2010
• 出版时间：July 2010
• 年：2010
• 卷：50
• 期：7
• 页码：954-958
• 全文大小：808 K

文摘

High κ HfO_xN_y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO₂ target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors were investigated. Experimental results indicate that the nitrogen incorporation into HfO₂ can produce a strong nitride interfacial barrier layer, thus lead to reducing the interface state density, suppressing the hysteresis voltage, and decreasing the gate-leakage current. Improved performance has been achieved for HfO_xN_y gate dielectric a-IGZO MIS capacitors, with a interface state density of 5.1 × 10¹¹ eV⁻¹ cm⁻², a gate-leakage current density of 3.9 × 10⁻⁵ A/cm² at V_fb + 1 V, an equivalent permittivity of 24, and a hysteresis voltage of 105 mV. Moreover, the enhanced reliability of Al/HfO_xN_y/a-IGZO MIS capacitor is observed with a small degradation of electrical characteristics after a high field stressing at 10 MV/cm for 3600 s.