Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect
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- 作者：Atefeh Nazaria ; atefe.nazari@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Rahim Faezb ; Hassan Shamlooa
- 关键词：Armchair monolayer graphene nanoribbon field effect transistor ; Single vacancy defect (SV) ; Non-equilibrium Green&rsquo ; s function(NEGF) ; Real space approach ; Tight-binding ; Semi classical top of barrier modeling (SCTOBM)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：28-45
- 全文大小：1773 K
文摘
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A graphene nanoribbon field effect transistor (GNRFET) with n-type source and drain and intrinsic channel is studied.
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Real-space Non-Equilibrium Green Function (NEGF) formalism is used.
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The effect of single vacancy (SV) defect on transistor performance is examined.
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The 3SVsGNRFET has smaller capacitance in comparison with Ideal GNRFET.
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The 3SVsGNRFET has good Drain Induced Barrier Lowering (DIBL) and sub-thershold swing.