Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates
详细信息 查看全文
- 作者：T. Nguyen Thanh ; C. Robert ; E. Giudicelli ; A. L¨¦toublon ; C. Cornet ; A. Ponchet ; T. Rohel ; A. Balocchi ; J.S. Micha ; M. Perrin ; S. Loualiche ; X. Marie ; N. Bertru ; O. Dur ; A. Le Corre
- 关键词：A1. Micro-twins ; A1. Planar defects ; A1. Synchrotron ; A1. X-ray diffraction ; A3. Molecular Beam Epitaxy ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2013
- 出版时间：1 September, 2013
- 年：2013
- 卷：378
- 期：Complete
- 页码：25-28
- 全文大小：913 K
文摘
We report on the quantitative study of microtwins (MT) defects in the GaP/Si(0 0 1) thin film grown by Molecular Beam Epitaxy and the optical properties of GaAsP(N)/GaP(N) quantum wells grown on top of the GaP/Si pseudo-substrates. A 780 nm photoluminescence at room temperature from the GaAsPN quantum wells is measured on silicon. Time-resolved photoluminescence has been performed and evidences the influence of non-radiative defects originated from the GaP/Si interface. The structural defects such as MT are quantitatively analyzed by synchrotron X-ray diffraction (XRD) combined with transmission electron microscopy (TEM) analyses. We show that the XRD measurements are in good agreement with TEM observation and reveal a strong contribution of MT in the [1 1 1] direction. The MT density appears to be directly correlated with the growth temperature.