LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO₂ gate dielectric

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• 作者：N. Lukyanchikova^a ; N. Garbar^a ; V. Kudina^a ; A. Smolanka^a ; E. Simoen^b ; ^{simoen@imec.be"" rel=""nofollow} ; C. Claeys^b ; ^c
• 关键词：Lorentzian noise ; Tri-gate SOI FinFETs ; Strain
• 刊名：Solid-State Electronics
• 出版年：2011
• 出版时间：September 2011
• 年：2011
• 卷：63
• 期：1
• 页码：27-36
• 全文大小：1845 K

文摘

The LKE (Linear Kink Effect) and BGI (Back-Gate-Induced) Lorentzians present in the drain current noise spectra of fully-depleted tri-gate n- and pFinFETs, fabricated on sSOI and SOI substrates with HfSiON/SiO₂ gate dielectric are described.

It is shown that the analysis of the parameters of LKE and BGI Lorentzians allows to find the values of (С_eq/m′β²), β and [j_EVB/(m′β)²] where С_eq is the body-source capacitance, m′ ≈ 1, β is the body factor and j_EVB is the density of the EVB current flowing through the gate dielectric.

As a result, the following effects were observed for the first time: (i) (С_eq/m′β²) decreases with increasing gate overdrive voltage V^* and depends sub-linearly on the effective fin width W_eff under strong inversion conditions; (ii) in depletion and weak inversion where (С_eq/β²) is independent of V^* the proportionality (С_eq/β²) ∝ W_eff is observed for an effective width W_eff  0.87 μm while (С_eq/β²) becomes independent on W_eff for W_eff < 0.87 μm; (iii) the value of β for the FinFETs investigated is higher than for their planar counterparts; (iv) in spite of the fact that strain affects the barrier height at the Si/SiO₂ interface, the EVB current densities j_EVB for sSOI and SOI devices are equal; (v) the values of j_EVB for the HfSiON/SiO₂-devices are much higher than for the HfО₂/SiO₂-ones studied previously. It is also shown that the gate overdrive voltage V^* at which the LKE Lorentzians start to appear is as low as 0.25 V.