Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

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• 作者：Jinzhong Wang ; Elangovan Elamurugu ; Vincent Sallet ; Franç ; ois Jomard ; Alain Lusson ; Ana M. Botelho do Rego ; Pedro Barquinha ; Gonç ; alo Gonç ; alves ; Rodrigo Martins ; Elvira Fortunato
• 关键词：ZnO thin films ; SIMS depth profiling ; XPS analysis ; PL spectra
• 刊名：Applied Surface Science
• 出版年：2008
• 出版时间：15 September 2008
• 年：2008
• 卷：254
• 期：22
• 页码：7178-7182
• 全文大小：623 K

文摘

N-doped ZnO films were deposited by RF magnetron sputtering in N₂/Ar gas mixture and were post-annealed at different temperatures (T_a) ranging from 400 to 800 °C in O₂ gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV–vis–NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T_a to become the preferred orientation at higher T_a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T_a, especially above 400 °C. The average visible transmittance (400–800 nm) of the as-deposited films (26 % ) was increased with the increasing T_a to reach a maximum of 75 % at 600 °C but then decreased. In the PL spectra, A⁰X emission at 3.321 eV was observed for T_a = 400 °C besides the main D⁰X emission. The intensity of the A⁰X emission was decreased with the increasing T_a whereas D⁰X emission became sharper and more optical emission centers were observed when T_a is increased above 400 °C.